| 发明名称 | Cross-coupling-based design using diffusion contact structures | ||
| 摘要 | An approach for providing cross-coupling-based designs using diffusion contact structures is disclosed. Embodiments include providing first and second gate structures over a substrate; providing a gate cut region across the first gate structure, the second gate structure, or a combination thereof; providing a first gate contact over the first gate structure; providing a second gate contact over the second gate structure; and providing a diffusion contact structure coupling the first gate contact to the second gate contact, the diffusion contact structure having vertices within the gate cut region. | ||
| 申请公布号 | US9159724(B2) | 申请公布日期 | 2015.10.13 |
| 申请号 | US201414161063 | 申请日期 | 2014.01.22 |
| 申请人 | GLOBALFOUNDRIES INC. | 发明人 | Wang Yan;Ma Yuansheng;Kye Jongwook;Rashed Mahbub |
| 分类号 | H01L29/40;H01L27/088;H01L21/8234;H01L27/02;H01L21/768;H01L21/8238;H01L27/092 | 主分类号 | H01L29/40 |
| 代理机构 | Ditthavong & Steiner, P.C. | 代理人 | Ditthavong & Steiner, P.C. |
| 主权项 | 1. A device comprising: first and second gate structures over a substrate; a gate cut region across the first gate structure, the second gate structure, or a combination thereof; a first gate contact over the first gate structure; a second gate contact over the second gate structure; and a diffusion contact structure coupling the first gate contact to the second gate contact, the diffusion contact structure having vertices within the gate cut region. | ||
| 地址 | Grand Cayman KY | ||