发明名称 |
Nanotube structure based metal damascene process |
摘要 |
In various embodiments a method for manufacturing a metallization layer on a substrate is provided, wherein the method may include forming a plurality of groups of nanotubes over a substrate, wherein the groups of nanotubes may be arranged such that a portion of the substrate is exposed and forming metal over the exposed portion of the substrate between the plurality of groups of nanotubes. |
申请公布号 |
US9159669(B2) |
申请公布日期 |
2015.10.13 |
申请号 |
US201414168025 |
申请日期 |
2014.01.30 |
申请人 |
INFINEON TECHNOLOGIES AG |
发明人 |
Joshi Ravi;Steinbrenner Juergen |
分类号 |
H01L23/528;H01L21/768;H01L21/02;H01L23/532 |
主分类号 |
H01L23/528 |
代理机构 |
|
代理人 |
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主权项 |
1. A method for manufacturing a metallization layer on a substrate, the method comprising:
forming an adhesion promoting layer on the substrate; providing a separate substrate with fully grown nanotubes; transferring the full grown nanotubes from the separate substrate onto the adhesion promoting layer; forming a plurality of groups of nanotubes from the nanotubes transferred from the separate substrate over the substrate, wherein the groups of nanotubes are arranged such that a portion of the substrate is exposed; and forming metal over the exposed portion of the substrate between the groups of nanotubes. |
地址 |
Neubiberg DE |