FinFET and fabricating method thereof

摘要

A fin-shaped field-effect transistor process includes the following steps. A substrate is provided. A first fin-shaped field-effect transistor and a second fin-shaped field-effect transistor are formed on the substrate, wherein the first fin-shaped field-effect transistor includes a first metal layer and the second fin-shaped field-effect transistor includes a second metal layer. A treatment process is performed on the first fin-shaped field-effect transistor to adjust the threshold voltage of the first fin-shaped field-effect transistor. A fin-shaped field-effect transistor formed by said process is also provided.

主权项

1. A field-effect transistor, comprising:
a first fin-shaped field-effect transistor and a second fin-shaped field-effect transistor with the same conductivity type located on a substrate, wherein the first fin-shaped field-effect transistor comprises a buffer layer, a dielectric layer, a bottom barrier layer and a first work function layer all having U-shaped cross-sectional profiles stacked on each other and the second fin-shaped field-effect transistor comprises a buffer layer, a dielectric layer, a bottom barrier layer and a second work function layer all having U-shaped cross-sectional profiles stacked on each other, and the first work function layer and the second work function layer are of the same material but are of different thicknesses.