| 发明名称 |
Controlled process and resulting device |
| 摘要 |
A method for forming a multi-material thin film includes providing a multi-material donor substrate comprising single crystal silicon and an overlying film comprising GaN. Energetic particles are introduced through a surface of the multi-material donor substrate to a selected depth within the single crystal silicon. The method includes providing energy to a selected region of the donor substrate to initiate a controlled cleaving action in the donor substrate. Then, a cleaving action is made using a propagating cleave front to free a multi-material film from a remaining portion of the donor substrate, the multi-material film comprising single crystal silicon and the overlying film. |
| 申请公布号 |
US9159605(B2) |
申请公布日期 |
2015.10.13 |
| 申请号 |
US201414471583 |
申请日期 |
2014.08.28 |
| 申请人 |
SILICON GENESIS CORPORATION |
发明人 |
Henley Francois J.;Cheung Nathan |
| 分类号 |
H01L21/46;H01L21/425;H01L21/762;H01L21/268;H01L21/18;H01L21/20;H01L21/78;H01L21/223;H01L21/304;H01L21/265 |
主分类号 |
H01L21/46 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
providing a multi-material donor substrate comprising single crystal silicon and an overlying film comprising SiC; introducing energetic particles through a surface of the multi-material donor substrate to a selected depth within the single crystal silicon; providing energy to a selected region of the donor substrate to initiate a controlled cleaving action in the donor substrate; and making a cleaving action using a propagating cleave front to free a multi-material film from a remaining portion of the donor substrate, the multi-material film comprising single crystal silicon and the overlying film. |
| 地址 |
San Jose CA US |
