发明名称 |
Two-terminal reversibly switchable memory device |
摘要 |
A memory using mixed valence conductive oxides is disclosed. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic conductor that is an electrolyte to oxygen and promotes an electric field effective to cause oxygen ionic motion. |
申请公布号 |
US9159913(B2) |
申请公布日期 |
2015.10.13 |
申请号 |
US201414463518 |
申请日期 |
2014.08.19 |
申请人 |
Unity Semiconductor Corporation |
发明人 |
Rinerson Darrell;Chevallier Christophe J.;Kinney Wayne;Lambertson Roy;Sanchez, Jr. John E.;Schloss Lawrence;Swab Philip;Ward Edmond |
分类号 |
H01L45/00;G06F17/50;G11C11/56;G11C13/00;H01L27/24 |
主分类号 |
H01L45/00 |
代理机构 |
Stolowitz Ford Cowger LLP |
代理人 |
Stolowitz Ford Cowger LLP |
主权项 |
1. A method, comprising:
providing a memory element (ME) including a first ion reservoir having mobile oxygen ions and in contact with a first electrode of a two-terminal switch and a tunnel barrier and a second reservoir in contact with the tunnel barrier and positioned between a second electrode of the two-terminal switch and the tunnel barrier, the second reservoir operative as a repository for the mobile oxygen ions; and applying a read voltage across the first and second electrodes, the read voltage operative to generate a read current having a magnitude that is indicative of a present conductivity of the ME, wherein applying the read voltage is non-destructive to the present conductivity of the ME. |
地址 |
Sunnyvale CA US |