发明名称 Two-terminal reversibly switchable memory device
摘要 A memory using mixed valence conductive oxides is disclosed. The memory includes a mixed valence conductive oxide that is less conductive in its oxygen deficient state and a mixed electronic ionic conductor that is an electrolyte to oxygen and promotes an electric field effective to cause oxygen ionic motion.
申请公布号 US9159913(B2) 申请公布日期 2015.10.13
申请号 US201414463518 申请日期 2014.08.19
申请人 Unity Semiconductor Corporation 发明人 Rinerson Darrell;Chevallier Christophe J.;Kinney Wayne;Lambertson Roy;Sanchez, Jr. John E.;Schloss Lawrence;Swab Philip;Ward Edmond
分类号 H01L45/00;G06F17/50;G11C11/56;G11C13/00;H01L27/24 主分类号 H01L45/00
代理机构 Stolowitz Ford Cowger LLP 代理人 Stolowitz Ford Cowger LLP
主权项 1. A method, comprising: providing a memory element (ME) including a first ion reservoir having mobile oxygen ions and in contact with a first electrode of a two-terminal switch and a tunnel barrier and a second reservoir in contact with the tunnel barrier and positioned between a second electrode of the two-terminal switch and the tunnel barrier, the second reservoir operative as a repository for the mobile oxygen ions; and applying a read voltage across the first and second electrodes, the read voltage operative to generate a read current having a magnitude that is indicative of a present conductivity of the ME, wherein applying the read voltage is non-destructive to the present conductivity of the ME.
地址 Sunnyvale CA US