Unit pixel of image sensor and image sensor including the same

摘要

A unit pixel of an image sensor includes a photoelectric conversion region, a floating diffusion region, and a transfer gate. The photoelectric conversion region is in an active region defined by an isolation region of a semiconductor substrate. The photoelectric conversion region generates electric charges corresponding to incident light. The transfer gate transfers the electric charges to the floating diffusion region, which is located in the active region. The transfer gate includes first and second portions divided relative to a reference line, and at least one of the first or second portions does not overlap the isolation region.

主权项

1. A unit pixel of an image sensor, the unit pixel comprising:
a photoelectric conversion region in an active region defined by an isolation region of a semiconductor substrate, the photoelectric conversion region to generate electric charges corresponding to incident light; a floating diffusion region in the active region; and a transfer gate to transfer the electric charges to the floating diffusion region, the transfer gate adjacent to the photoelectric conversion region and the floating diffusion region, the transfer gate including first and second portions divided relative to a reference line in a direction from the photoelectric conversion region to the floating diffusion region, wherein at least one of the first and second portions does not overlap the isolation region.