发明名称 Elongated bump structures in package structure
摘要 A package structure includes a chip attached to a substrate. The chip includes a bump structure including a conductive pillar having a length (L) measured along a long axis of the conductive pillar and a width (W) measured along a short axis of the conductive pillar. The substrate includes a pad region and a mask layer overlying the pad region, wherein the mask layer has an opening exposing a portion of the pad region. The chip is attached to the substrate to form an interconnection between the conductive pillar and the pad region. The opening has a first dimension (d1) measured along the long axis and a second dimension (d2) measured along the short axis. In an embodiment, L is greater than d1, and W is less than d2.
申请公布号 US9159695(B2) 申请公布日期 2015.10.13
申请号 US201313735750 申请日期 2013.01.07
申请人 Taiwan Semiconductor Manufacturing Company, Ltd. 发明人 Chuang Yao-Chun;Chuang Chita;Tseng Ming Hung;Chen Chen-Shien
分类号 H01L23/48;H01L23/52;H01L29/40;H01L21/44;H01L23/00;H01L23/498 主分类号 H01L23/48
代理机构 Slater & Matsil, L.L.P. 代理人 Slater & Matsil, L.L.P.
主权项 1. A package structure, comprising: a chip comprising a bump structure, wherein the bump structure comprises a conductive pillar having a length (L) measured along a long axis of the conductive pillar and a width (W) measured along a short axis of the conductive pillar, wherein L is different from W, wherein the bump structure further comprises an under bump metallurgy layer; and a substrate comprising a pad region and a mask layer overlying the pad region, wherein the mask layer has an opening exposing a portion of the pad region, wherein the conductive pillar of the chip is attached to the pad region of the substrate via a solder joint region to form an interconnection between the conductive pillar and the pad region, wherein the solder joint region contacts a center of a major top surface of the conductive pillar along the long axis of the conductive pillar, wherein the opening has a first dimension (d1) measured along the long axis and a second dimension (d2) measured along the short axis; and wherein L is greater than d1, and W is less than d2.
地址 Hsin-Chu TW