Low contact resistance organic thin film transistors

摘要

The invention provides the use of a solvent selected from the group consisting of alkoxybenzenes and alkyl substituted alkoxybenzenes in reducing the contact resistance in an organic thin film transistor comprising a semiconductor layer comprising a blend of a small molecule semiconductor material and a polymer material that is deposited from a solution of said small molecule semiconductor material and said polymer material in said solvent and novel semiconductor blend formulations that are of particular use in preparing organic thin film transistors. Said solvents yield devices with lower absolute contact resistance, lower absolute channel resistance, and lower proportion of contact resistance to the total channel resistance.

主权项

1. A method for reducing the contact resistance in an organic thin film transistor comprising a channel region and a semiconductor layer, wherein said semiconductor layer comprises a blend of a small molecule semiconductor material and a polymer material, said method comprising depositing said small molecule semiconductor material and said polymer material from a solution thereof in said channel region of said organic thin film transistor, wherein said solution comprises a solvent selected from the group consisting of 2-methylanisole and 4-methylanisole.