| 发明名称 | Surface acoustic wave device | ||
| 摘要 | A surface acoustic wave device includes a piezoelectric substrate, an IDT electrode provided on the piezoelectric substrate, a first dielectric layer, and a second dielectric layer. The first dielectric layer is provided on the piezoelectric substrate and made of silicon oxide. The second dielectric layer is provided on the first dielectric layer and has an acoustic velocity greater than that of the first dielectric layer. A third dielectric layer is provided between the first dielectric layer and the piezoelectric substrate, and arranged to cover a surface of the piezoelectric substrate and an upper surface and side surfaces of the IDT electrode. | ||
| 申请公布号 | US9159900(B2) | 申请公布日期 | 2015.10.13 |
| 申请号 | US201313930238 | 申请日期 | 2013.06.28 |
| 申请人 | Murata Manufacturing Co., Ltd. | 发明人 | Tamasaki Daisuke |
| 分类号 | H03H9/25;H01L41/047;H01L41/053;H03H9/02;H03H9/145;H03H9/64 | 主分类号 | H03H9/25 |
| 代理机构 | Keating & Bennett, LLP | 代理人 | Keating & Bennett, LLP |
| 主权项 | 1. A surface acoustic wave device comprising: a piezoelectric substrate; an IDT electrode provided on the piezoelectric substrate; a first dielectric layer provided on the piezoelectric substrate and made of silicon oxide; and a second dielectric layer provided on the first dielectric layer and having an acoustic velocity greater than that of the first dielectric layer; wherein the surface acoustic wave device further includes a third dielectric layer provided between the first dielectric layer and the piezoelectric substrate so as to cover a surface of the piezoelectric substrate and an upper surface and side surfaces of the IDT electrode; and a thickness of the third dielectric layer is at least about 0.015λ, where λ is a wavelength of the IDT electrode determined by a pitch between electrode fingers of the IDT electrode. | ||
| 地址 | Kyoto JP | ||