Semiconductor device and method of fabricating the same

摘要

A semiconductor device may include a substrate having a lower via-hole, an epitaxial layer having an opening exposing a top surface of the substrate, a semiconductor chip disposed on the top surface of the substrate and including first, second, and third electrodes, an upper metal layer connected to the first electrode, a supporting substrate disposed on the upper metal layer and having an upper via-hole, an upper pad disposed on the substrate and extending into the upper via-hole, a lower pad connected to the second electrode in the opening, and a lower metal layer covering a bottom surface of the substrate and connected to the lower pad through the lower via-hole.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
providing a substrate having a top surface and a bottom surface opposite to each other; forming an epitaxial layer on the top surface of the substrate; forming a lower pad contacting the top surface of the substrate; forming a semiconductor chip on the epitaxial layer, the semiconductor chip including a first electrode, a second electrode, and a third electrode; forming a lower via-hole penetrating the substrate, the lower via-hole exposing the lower pad; and forming a lower metal layer covering the bottom surface of the substrate, the lower metal layer extending into the lower via-hole and contacting the lower metal layer, wherein forming the lower pad comprises: removing a portion of the epitaxial layer to expose the top surface of the substrate; and forming the lower pad directly on the exposed top surface of the substrate.