Method of making a semiconductor device using a bottom antireflective coating (BARC) layer

摘要

This description relates to a method of making a semiconductor device including forming an inter-level dielectric (ILD) layer over a substrate and forming a layer set over the ILD layer. The method further includes etching the layer set to form a tapered opening in the layer set and etching the ILD layer using the layer set as a mask to form an opening in the ILD layer. The opening in the ILD layer has a line width roughness (LWR) of less than 3 nanometers (nm). This description also relates to a semiconductor device including an inter-level dielectric (ILD) layer over a substrate; and a layer set over the ILD layer. The layer set has a tapered opening within the layer set. Etching the layer set comprises forming the tapered opening having sidewalls at an angle with respect to a top surface of the ILD layer ranging from 85-degrees to 90-degrees.

主权项

1. A method of forming a semiconductor device comprising:
forming an inter-level dielectric (ILD) layer over a substrate; forming a layer set over the ILD layer, wherein the layer set comprises a plurality of layers; forming a bottom antireflective coating (BARC) layer over the layer set; etching the layer set to form a tapered opening in the layer set, wherein etching the layer set comprises etching at least one layer comprising a silicon-rich photoresist material layer and a second material layer different from the silicon-rich photoresist material; and etching the ILD layer using the layer set as a mask to form an opening in the ILD layer, wherein etching the layer set comprises forming the tapered opening having sidewalls at an angle with respect to a top surface of the ILD layer, and etching the ILD layer comprises reducing a thickness of the layer set.