Thermo programmable resistor based ROM

摘要

An integrated circuit is formed having an array of memory cells located in the dielectric stack above a semiconductor substrate. Each memory cell has an adjustable resistor and a heating element. A dielectric material separates the heating element from the adjustable resistor. The heating element alters the resistance of the resistor by applying heat thereto. The magnitude of the resistance of the adjustable resistor represents the value of data stored in the memory cell.

主权项

1. An integrated circuit comprising:
a semiconductor substrate; a first dielectric layer overlying the substrate; an adjustable resistor overlying the first dielectric layer, a resistance of the adjustable resistor being representative of a value of digital data stored in the adjustable resistor; a heating element adjacent the adjustable resistor and writing digital data to the adjustable resistor; a second dielectric layer between the adjustable resistor and the heating element; a bit line in ohmic electrical connection with both the adjustable resistor and the heating element and providing the value of the digital data during a data read cycle of the adjustable resistor; a word line in ohmic electrical connection with the adjustable resistor; and a heater line in ohmic electrical connection with the heating element, the heater line being different from the word line and the bit line.