Photoelectrochemical cell and energy system using same

摘要

A photoelectrochemical cell (100) includes: a semiconductor electrode (120) including a conductor (121) and semiconductor layers (122, 123) disposed on the conductor (121); a counter electrode (130) connected electrically to the conductor (121); an electrolyte (140) in contact with surfaces of the semiconductor layer (123) and the counter electrode (130); and a container (110) accommodating the semiconductor electrode (120), the counter electrode (130) and the electrolyte (140). A band edge level ECS of a conduction band, a band edge level EVS of a valence band, and a Fermi level EFS in a surface near-field region of the semiconductor layer, and a band edge level ECJ of a conduction band, a band edge level EVJ of a valence band, and a Fermi level EFJ in a junction plane near-field region of the semiconductor layer with the conductor satisfy, relative to a vacuum level, ECS−EFS>ECJ−EFJ, EFS−EVS−4.44 eV, and EVS<−5.67 eV. The Fermi level EFS in the surface near-field region of the semiconductor layer and the Fermi level EFJ in the junction plane near-field region of the semiconductor layer with the conductor satisfy, relative to the vacuum level, −5.67 eV

主权项

1. A photoelectrochemical cell comprising:
a semiconductor electrode including a conductor and a semiconductor layer disposed on the conductor; a counter electrode connected electrically to the conductor; an electrolyte in contact with surfaces of the semiconductor layer and the counter electrode; and a container accommodating the semiconductor electrode, the counter electrode and the electrolyte, wherein a band edge level ECS of a conduction band, a band edge level EVS of a valence band, and a Fermi level EFS in a surface near-field region of the semiconductor layer, and a band edge level ECJ of a conduction band, a band edge level EVJ of a valence band, and a Fermi level EFJ in a junction plane near-field region of the semiconductor layer with the conductor satisfy, relative to a vacuum level, ECS−EFS>ECJ−EFJ, EFS−EVS−4.44 eV, and EVS<−5.67 eV, and the Fermi level EFS in the surface near-field region of the semiconductor layer and the Fermi level EFJ in the junction plane near-field region of the semiconductor layer with the conductor satisfy, relative to the vacuum level, −5.67 eVBaZr1-xMxO3-α  (General Formula A)where M denotes at least one element selected from trivalent elements, x denotes a numerical value of more than 0 and less than 1, and α denotes an amount of oxygen deficiency that is a numerical value of more than 0 and less than 1.5; and
BaZrxCeyM1-x-yO3-α  (General Formula B)where M denotes at least one element selected from trivalent elements, x denotes a numerical value of more than 0 and less than 1, y denotes a numerical value of more than 0 and less than 1, x+y<1 is satisfied, and α denotes an amount of oxygen deficiency that is a numerical value of more than 0 and less than 1.5.