Elimination of first wafer effect for PECVD films

摘要

The present invention generally provides an apparatus and method for eliminating the “first wafer effect” for plasma enhanced chemical vapor deposition (PECVD). One embodiment of the present invention provides a method for preparing a chamber after the chamber being idle for a period of time. The method comprises a cleaning step followed by a season step and a heating step adapted to the length of the idle time.

主权项

1. A method for preparing a chamber after the chamber being idle for a period of time, comprising:
prior to introducing a substrate into the chamber, seasoning a liquid flow meter by flowing a liquid precursor through the liquid flow meter with radio frequency power turned off for a given period of time; cleaning the chamber using a first active species; seasoning the chamber by delivering a first gas mixture while applying radio frequency power to the first gas mixture; and after seasoning the chamber and prior to introduction of the substrate, stabilizing at least a portion of a showerhead assembly within the chamber by alternately heating and cooling at least the portion of the showerhead assembly.