发明名称 |
Semiconductor device and method of manufacturing the same |
摘要 |
To improve the electric performance and reliability of a semiconductor device. A memory gate electrode of a split gate type nonvolatile memory is a metal gate electrode formed from a stacked film of a metal film 6a and a silicon film 6b over the metal film 6a. In an upper end part of the metal film 6a, a metal oxide portion 17 is formed by oxidation of a part of the metal film 6a. A control gate electrode of the split gate type nonvolatile memory is a metal gate electrode formed from a stacked film of a metal film 4a and the silicon film 4b over the metal film 4a. |
申请公布号 |
US9159843(B2) |
申请公布日期 |
2015.10.13 |
申请号 |
US201213476356 |
申请日期 |
2012.05.21 |
申请人 |
Renesas Electronics Corporation |
发明人 |
Saito Kentaro;Yanagisawa Kazumasa;Ishii Yasushi;Toba Koichi |
分类号 |
H01L29/778;H01L21/336;H01L29/792;H01L21/28;H01L27/115;H01L29/423;H01L29/66;G11C16/04 |
主分类号 |
H01L29/778 |
代理机构 |
Miles & Stockbridge P.C. |
代理人 |
Miles & Stockbridge P.C. |
主权项 |
1. A semiconductor device, comprising:
a semiconductor substrate; a first gate electrode formed in an upper part of the semiconductor substrate; a second gate electrode that is formed in an upper part of the semiconductor substrate and is adjacent to the first gate electrode; a first insulating film formed between the first gate electrode and the semiconductor substrate; and a second insulating film that is formed between the second gate electrode and the semiconductor substrate and between the first gate electrode and the second gate electrode, and that includes an electric charge accumulation part, wherein: the second gate electrode has a first metal film adjacent to the second insulating film and a first silicon film that is formed over the first metal film and is separated from the second insulating film via the first metal film; and a first metal oxide portion is formed in an upper end part of the first metal film. |
地址 |
Tokyo JP |