Radio-frequency switches having silicon-on-insulator field-effect transistors with reduced linear region resistance

摘要

Disclosed are devices and methods related to radio-frequency (RF) switches having silicon-on-insulator (SOI) field-effect transistors (FETs). In some embodiments, an RF switch can include an FET with shaped source, drain, and gate selected to yield a reduced per-area value of resistance in linear operating region (Rds-on). In some implementations, a plurality of such FETs can be connected in series to allow use of SOI technology in high power RF switching applications while maintaining a relatively small die size.

主权项

1. A radio-frequency (RF) switch comprising:
a semiconductor substrate; an input assembly including a plurality of source regions formed on the semiconductor substrate, a source contact formed on each of the source regions, and an input conductor that electrically connects to each of the source contacts; an output assembly including a plurality of drain regions formed on the semiconductor substrate, a drain contact formed on each of the drain regions, and an output conductor that electrically connects to each of the drain contacts; and a gate layer disposed over the source and drain regions, the gate layer defining a first opening over each of the source regions and a second opening over each of the drain regions, at least some of the first and second openings arranged in a two-dimensional array, each of the first and second openings forming a double-diamond shaped diffusion region, the source regions, the drain regions, and the gate layer configured as one or more field effect transistors (FETs).