| 发明名称 | Lithography layer with quenchers to prevent pattern collapse | ||
| 摘要 | The present disclosure provides a method for forming resist patterns. The method includes providing a substrate; forming a material layer including a plurality of quenchers on the substrate; forming a resist layer on the material layer; exposing the resist layer; and developing the resist layer to form a structure featuring resist remaining layer on an upper surface of the material layer, and a plurality of resist features on the resist remaining layer to improve the yield of lithography process. | ||
| 申请公布号 | US9159559(B2) | 申请公布日期 | 2015.10.13 |
| 申请号 | US201313945523 | 申请日期 | 2013.07.18 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Chien Shang-Chieh;Chang Shu-Hao;Wu Jui-Ching;Chen Jeng-Horng;Yen Anthony |
| 分类号 | H01L21/308;H01L21/027;H01L21/033 | 主分类号 | H01L21/308 |
| 代理机构 | Haynes and Boone, LLP | 代理人 | Haynes and Boone, LLP |
| 主权项 | 1. A method for forming resist patterns comprising: providing a substrate; forming a material layer on the substrate, the material layer including a plurality of quenchers; forming a resist layer on the material layer; exposing the resist layer; and developing the resist layer to form a resist remaining layer on an upper surface of the material layer, and a plurality of resist features on the resist remaining layer, wherein the resist remaining layer is continuously covering the upper surface of the material layer prior to the material layer being etched. | ||
| 地址 | Hsin-Chu TW | ||