Method of fabricating gallium nitride based semiconductor device

摘要

Exemplary embodiments of the present invention disclose a method of fabricating a gallium nitride (GaN) based semiconductor device. The method includes growing GaN based semiconductor layers on a first surface of a GaN substrate to form a semiconductor stack, and separating at least a first portion of the GaN substrate from the semiconductor stack using a wire cutting technique.

主权项

1. A method of fabricating a gallium nitride (GaN) based semiconductor device, the method comprising:
growing GaN based semiconductor layers on a first surface of a GaN substrate, wherein the GaN based semiconductor layers comprise a semiconductor stack and have a dislocation density of about 5×106/cm2 or less; separating at least a first portion of the GaN substrate from the semiconductor stack using a wire cutting technique to decrease a thickness of the GaN substrate; and removing a second portion of the GaN substrate remaining on the semiconductor stack using a laser lift-off.