SiC semiconductor device

摘要

A SiC semiconductor device includes a SiC semiconductor layer having a first-conductivity-type impurity, a field insulation film formed on a front surface of the SiC semiconductor layer and provided with an opening for exposing therethrough the front surface of the SiC semiconductor layer, an electrode connected to the SiC semiconductor layer through the opening of the field insulation film, and a guard ring having a second-conductivity-type impurity and being formed in a surface layer portion of the SiC semiconductor layer to make contact with a terminal end portion of the electrode connected to the SiC semiconductor layer. A second-conductivity-type impurity concentration in a surface layer portion of the guard ring making contact with the electrode is smaller than a first-conductivity-type impurity concentration in the SiC semiconductor layer.

主权项

1. A SiC semiconductor device, comprising:
a SiC semiconductor layer having a first-conductivity-type impurity; a field insulation film formed on a front surface of the SiC semiconductor layer and provided with an opening for exposing therethrough the front surface of the SiC semiconductor layer; an electrode connected to the SiC semiconductor layer through the opening of the field insulation film; and a guard ring having a second-conductivity-type impurity and being formed in a surface layer portion of the SiC semiconductor layer to make contact with an outer edge portion of the electrode within the opening, the second-conductivity-type impurity in a surface layer portion of the guard ring making contact with the electrode having a smaller impurity concentration than the first-conductivity-type impurity; wherein a boundary portion of the electrode overlaps with the guard ring in a plan view.