Strain compensation in transistors

摘要

Transistor structures having channel regions comprising alternating layers of compressively and tensilely strained epitaxial materials are provided. The alternating epitaxial layers can form channel regions in single and multigate transistor structures. In alternate embodiments, one of the two alternating layers is selectively etched away to form nanoribbons or nanowires of the remaining material. The resulting strained nanoribbons or nanowires form the channel regions of transistor structures. Also provided are computing devices comprising transistors comprising channel regions comprised of alternating compressively and tensilely strained epitaxial layers and computing devices comprising transistors comprising channel regions comprised of strained nanoribbons or nanowires.

主权项

1. A device comprising:
a substrate having a surface wherein the surface comprises a first epitaxial material having a first lattice constant, a channel region disposed on the substrate surface comprising a plurality of layers of a second epitaxial material and a plurality of layers of a third epitaxial material, wherein the lattice constant of the second epitaxial material is larger than the lattice constant of the first epitaxial material, wherein the lattice constant of the third epitaxial material is smaller than the lattice constant of the first epitaxial material, and wherein the second and third epitaxial layers are disposed in an alternating pattern, and a gate region disposed on two or three sides of the channel region wherein the gate region comprises a gate dielectric material disposed between a gate electrode material and the channel region.