| 发明名称 | Semiconductor device with HCI protection region | ||
| 摘要 | A device includes a semiconductor substrate, a drift region in the semiconductor substrate and having a first conductivity type, an isolation region within the drift region, and around which charge carriers drift on a path through the drift region during operation, and a protection region adjacent the isolation region in the semiconductor substrate, having a second conductivity type, and disposed along a surface of the semiconductor substrate. | ||
| 申请公布号 | US9159803(B2) | 申请公布日期 | 2015.10.13 |
| 申请号 | US201213590995 | 申请日期 | 2012.08.21 |
| 申请人 | Freescale Semiconductor, Inc. | 发明人 | Min Won Gi;Yang Hongning;Zuo Jiangkai |
| 分类号 | H01L29/78;H01L29/66;H01L29/06;H01L29/40;H01L29/08;H01L29/10 | 主分类号 | H01L29/78 |
| 代理机构 | Lempia Summerfield Katz LLC | 代理人 | Lempia Summerfield Katz LLC |
| 主权项 | 1. A device comprising: a semiconductor substrate; a drift region in the semiconductor substrate and having a first conductivity type; a gate structure supported by the semiconductor substrate and comprising sidewall spacers; an isolation region within the drift region, laterally spaced from the gate structure, and around which charge carriers drift on a path through the drift region during operation; and a protection region having a second conductivity type, and disposed along a surface of the semiconductor substrate at a position adjacent the isolation region and in which at least a part of the protection region is both disposed along a channel-side sidewall of the isolation region and not disposed under the gate structure. | ||
| 地址 | Austin TX US | ||