Method of fabricating semiconductor device

摘要

A method for fabricating a semiconductor device includes forming a metal layer over a substrate, forming a capping layer over the metal layer, and densifying the metal layer through a heat treatment.

主权项

1. A method for fabricating a capacitor, comprising:
forming a lower electrode; forming a dielectric layer over the lower electrode; forming an upper electrode metal layer over the dielectric layer; forming an upper electrode capping layer over the upper electrode metal layer; densifying the upper electrode metal layer through a first heat treatment; removing all of the upper electrode capping layer; and forming an upper electrode by etching the upper electrode metal layer after all of the upper electrode capping layer is removed, wherein the forming of the lower electrode comprises:
forming a lower electrode metal layer;forming a lower electrode capping layer over the lower electrode metal layer;densifying the lower electrode metal layer through a second heat treatment;removing all of the lower electrode capping layer; andforming the lower electrode by etching the lower electrode metal layer after all of the lower electrode capping layer is removed.