Thin film transistor, manufacturing method thereof, array substrate and display device

摘要

A thin film transistor and a manufacturing method for the same, an array substrate, and a display device are disclosed. The thin film transistor comprises: a substrate (1) and a gate (2), a first gate insulating layer (3) and an active layer (4) which are disposed in order on the substrate, the first gate insulating layer (3) covers the gate (2), the active layer (4) covers the first gate insulating layer (3), and a material for the first gate insulating layer comprises aluminum oxide.

主权项

1. A thin film transistor comprising: a substrate and a gate, a first gate insulating layer and an active layer which are disposed in order on the substrate, the first gate insulating layer covering the gate, the active layer covering the first gate insulating layer, wherein a material for the first gate insulating layer comprises aluminum oxide, the first gate insulating layer covers an upper surface and all lateral surfaces of the gate, and the active layer covers an upper surface and all lateral surfaces of the first gate insulating layer;
wherein the active layer comprises portions located on the lateral surfaces of the gate, and the first gate insulating layer is not provided between the portions and the substrate in a direction perpendicular to the substrate.