Method for permanently bonding wafers

摘要

This invention relates to a method for bonding of a first contact surface of a first substrate to a second contact surface of a second substrate, the second substrate having at least one reaction layer, with the following steps, especially the following sequence:
forming a reservoir in a reservoir formation layer on the first contact surface,at least partial filling of the reservoir with a first educt or a first group of educts,the first contact surface making contact with the second contact surface for formation of a prebond connection,thinning of the second substrate andforming a permanent bond between the first and second contact surface, at least partially strengthened by the reaction of the first educt with the second educt contained in the reaction layer of the second substrate.

主权项

1. A method for bonding a first contact surface of a first substrate to a second contact surface of a second substrate, the second substrate having at least one reaction layer containing a second educt or a second group of educts, said method comprised of the following steps:
(a) forming a reservoir for retaining a first educt or a first group of educts in a reservoir formation layer on the first contact surface, (b) at least partially filling the reservoir with the first educt or the first group of educts after the reservoir is formed, (c) thinning the second substrate, (d) after the reservoir is filled with the first educt or the first group of educts, forming a prebond connection by bringing the first contact surface and the second contact surface into contact with each other, and (e) forming a permanent bond between the first contact surface and the second contact surface, said permanent bond at least partially strengthened by a reaction of the first educt or the first group of educts with the second educt or the second group of educts contained in the at least one reaction layer of the second substrate, wherein an average distance between the reservoir and the at least one reaction layer immediately before formation of the permanent bond is between 0.1 nm and 15 nm.