| 发明名称 | Method of fabricating semiconductor device | ||
| 摘要 | A method of fabricating a semiconductor device includes preparing a semiconductor substrate having a circuit unit on an upper surface thereof, a metal pad electrically connected to the circuit unit, and a passivation layer that covers the circuit unit and exposes the metal pad, forming a first re-wiring layer that is electrically connected to the metal pad and is formed by a printing method to extend from the metal pad on the passivation layer and forming a second re-wiring layer on the first re-wiring layer using the first re-wiring layer as a seed by using an electro-plating process. | ||
| 申请公布号 | US9159680(B2) | 申请公布日期 | 2015.10.13 |
| 申请号 | US201213486155 | 申请日期 | 2012.06.01 |
| 申请人 | SAMSUNG ELECTRONICS CO., LTD. | 发明人 | Park Sang-Wook;Lee Kwang-Yong;Song Ho-Geon |
| 分类号 | H01L21/28;H01L21/78;H01L23/00 | 主分类号 | H01L21/28 |
| 代理机构 | F. Chau & Associates, LLC | 代理人 | F. Chau & Associates, LLC |
| 主权项 | 1. A method of fabricating a semiconductor device, the method comprising: preparing a semiconductor substrate having a circuit unit on an upper surface thereof, a metal pad electrically connected to the circuit unit, and a passivation layer that covers the circuit unit and exposes the metal pad; forming a first re-wiring layer that is electrically connected to the metal pad and is formed by a printing method to extend from the metal pad on the passivation layer; and forming a second re-wiring layer on the first re-wiring layer using the first re-wiring layer as a seed by using an electro plating process. | ||
| 地址 | Suwon-Si, Gyeonggi-Do KR | ||