Methods of forming semiconductor device structures

摘要

A method of forming a semiconductor device structure comprises forming at least one reflective structure comprising at least two dielectric materials having different refractive indices over at least one radiation-sensitive structure, the at least one reflective structure configured to substantially reflect therefrom radiation within a predetermined wavelength range and to substantially transmit therethrough radiation within a different predetermined wavelength range. Additional methods of forming a semiconductor device structure are described. Semiconductor device structures are also described.

主权项

1. A method of forming a semiconductor device structure comprising forming at least one distributed Bragg reflector comprising at least three dielectric materials having different refractive indices than one another on an upper surface of a gate structure of a transistor and on an upper surface of an electrically insulative material laterally surrounding the gate structure, the at least one distributed Bragg reflector configured to substantially reflect therefrom radiation within a predetermined wavelength range and to substantially transmit therethrough radiation within a different predetermined wavelength range.