发明名称 Production of polycrystalline silicon by the thermal decomposition of dichlorosilane in a fluidized bed reactor
摘要 Processes for producing polycrystalline silicon by thermal decomposition of dichlorosilane are disclosed. The processes generally involve thermal decomposition of dichlorosilane in a fluidized bed reactor operated at reaction conditions that result in a high rate of productivity relative to conventional production processes.
申请公布号 US9156705(B2) 申请公布日期 2015.10.13
申请号 US201012977712 申请日期 2010.12.23
申请人 SunEdison, Inc. 发明人 Bhusarapu Satish;Gupta Puneet;Huang Yue
分类号 C01B33/03;B01J2/00;C23C16/44;B01J2/16;C23C16/442;C23C16/24 主分类号 C01B33/03
代理机构 Armstrong Teasdale LLP 代理人 Armstrong Teasdale LLP
主权项 1. A process for producing polycrystalline silicon by the thermal decomposition of dichlorosilane in a fluidized bed reactor having a core region and a peripheral region, the process comprising: introducing a first feed gas comprising dichlorosilane into the core region of the fluidized bed reactor, the fluidized bed reactor containing silicon particles and the temperature of the first feed gas being less than about 600° C., the dichlorosilane thermally decomposing in the fluidized bed reactor to deposit an amount of silicon on the silicon particles; and introducing a second feed gas into the peripheral region of the fluidized bed reactor, wherein the concentration of dichlorosilane in the first feed gas exceeds the concentration in the second feed gas and the pressure in the fluidized bed reactor is at least about 3 bar, the fluidized bed reactor operating at a conversion of less than about 80% of a conversion at equilibrium.
地址 Maryland Heights MO US