| 发明名称 | Resistive random access memory | ||
| 摘要 | A resistive random access memory includes a first electrode, a second electrode and a first metal oxide composite layer. The second electrode is opposite to the first electrode. The first metal oxide composite layer is disposed between the first electrode and the second electrode. The first metal oxide composite layer has a film layer and a nanorod structure. | ||
| 申请公布号 | US9159918(B2) | 申请公布日期 | 2015.10.13 |
| 申请号 | US201414150028 | 申请日期 | 2014.01.08 |
| 申请人 | National Tsing Hua University | 发明人 | Chueh Yu-Lun;Huang Chi-Hsin |
| 分类号 | H01L45/00;H01L27/24;B82Y30/00 | 主分类号 | H01L45/00 |
| 代理机构 | Muncy, Geissler, Olds & Lowe, P.C. | 代理人 | Muncy, Geissler, Olds & Lowe, P.C. |
| 主权项 | 1. A resistive random access memory, comprising: a first electrode; a second electrode opposite to the first electrode; and a first metal oxide composite layer disposed between the first electrode and the second electrode, wherein the first metal oxide composite layer has a film layer and a nanorod structure. | ||
| 地址 | Hsinchu TW | ||