Nonvolatile memory device, operating method thereof and memory system including the same

摘要

A method of operating a non-volatile memory device includes performing an erasing operation to memory cells associated with a plurality of string selection lines (SSLs), the memory cells associated with the plurality of SSLs constituting a memory block, and verifying the erasing operation to second memory cells associated with a second SSL after verifying the erasing operation to first memory cells associated with a first SSL.

主权项

1. A method of operating a non-volatile memory device including a plurality of cell strings connected to a bit line, each cell string having at least one ground selection transistor, a plurality of memory cells and at least one string selection transistor stacked sequentially from a substrate in a direction perpendicular to the substrate, ground selection transistors of the plurality of cell strings being connected to a ground selection line in common, string selection transistors of the plurality of cell strings being connected to a plurality of string selection lines respectively, and memory cells having the same height from the substrate being connected to a word line in common, the method comprising:
performing an erasing operation to memory cells of the plurality of cell strings; verifying first memory cells associated with a first string selection line of the plurality of string selection lines; and verifying second memory cells associated with a second string selection line of the plurality of string selection lines subsequent to verifying the first memory cells.