| 摘要 |
A light emitting device according to the embodiment of the present invention includes a substrate, a first conductive semiconductor layer which is arranged on the substrate, a pit generating layer which is arranged on the first conductive semiconductor layer, an active layer which is arranged on the pit generating layer and includes at least one pit, and a second conductive semiconductor layer which is arranged on the active layer. The pit generating layer includes AlN. A first layer and a second layer are arranged in the form of a pair on the pit generating layer. The light emitting device according to the embodiment of the present invention easily controls strain by including the AlN in the pit generating layer in comparison with the existing pit generating layer using GaN. |
