| 摘要 |
The present invention relates to a semiconductor light emitting element. The present invention includes multiple semiconductor layers sequentially grown by using a growth substrate, and including a first semiconductor layer having first conductivity, a second semiconductor layer having second conductivity, different from the first conductivity, and an active layer placed between the first and second semiconductor layers and generating light through recombination between an electron and a hole; a first electrode part electrically connected to the first semiconductor layer; a second electrode part electrically connected to the second semiconductor layer; and a non-conductive reflecting film formed on the semiconductor layers to reflect the light from the active layer to the growth substrate, including an opening, and of which exposed surface with an etched and reduced height difference forms an upper rim of the opening. At least one among the first and second electrodes includes a lower electrode at least partially exposed by the opening; electric connection formed in the opening to make contact with the lower electrode; and an upper electrode placed on the non-conductive reflecting film to be electrically connected to the electric connection. |
