发明名称 SUBSTRATE PROCESSING APPARATUS AND METHOD OF FORMING A THIN FILM AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME
摘要 The present invention provides a substrate processing device, and a manufacturing method thereof. The substrate processing device includes: first and second process areas; first and second division areas for dividing the first and second process areas; and a third process area for performing plasma doping by flowing partial reaction gas of the first process area into a space between the second process area and the second division area.
申请公布号 KR20150114056(A) 申请公布日期 2015.10.12
申请号 KR20140037644 申请日期 2014.03.31
申请人 JUSUNG ENGINEERING CO., LTD. 发明人 KWAK, JAE CHAN;LEE, SANG MIN;CHO, BYOUNG HA;HWANG, CHUL JOO
分类号 H01L21/205;H01L21/318 主分类号 H01L21/205
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