SUBSTRATE PROCESSING APPARATUS AND METHOD OF FORMING A THIN FILM AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME
摘要
The present invention provides a substrate processing device, and a manufacturing method thereof. The substrate processing device includes: first and second process areas; first and second division areas for dividing the first and second process areas; and a third process area for performing plasma doping by flowing partial reaction gas of the first process area into a space between the second process area and the second division area.
申请公布号
KR20150114056(A)
申请公布日期
2015.10.12
申请号
KR20140037644
申请日期
2014.03.31
申请人
JUSUNG ENGINEERING CO., LTD.
发明人
KWAK, JAE CHAN;LEE, SANG MIN;CHO, BYOUNG HA;HWANG, CHUL JOO