发明名称 |
IMAGE EVALUATION APPARATUS AND PATTERN SHAPE EVALUATION APPARATUS |
摘要 |
Provided are an image evaluation method and an image evaluation apparatus to evaluate a two-dimensional shape and a change in shape of a pattern side wall of a semiconductor pattern based on a SEM image, thus estimating an exposure condition. To this end, a method and a device include a storage unit that stores a model indicating a relationship between a feature amount that is obtained by creating a plurality of outlines from a SEM image and an exposure condition, and outline creation parameter information corresponding to the model; an outline creation unit that creates a plurality of outlines from a SEM image using the outline creation parameter information; and an estimation unit that uses a feature amount that is found based on the plurality of outlines created by the outline creation unit and the model to find an exposure condition. |
申请公布号 |
US2015287201(A1) |
申请公布日期 |
2015.10.08 |
申请号 |
US201314377728 |
申请日期 |
2013.02.12 |
申请人 |
HITACHI HIGH-TECHNOLOGIES CORPORATION |
发明人 |
Shinoda Shinichi;Toyoda Yasutaka;Minakawa Tsuyoshi;Matsuoka Ryoichi |
分类号 |
G06T7/00;H01J37/22;H01J37/28 |
主分类号 |
G06T7/00 |
代理机构 |
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代理人 |
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主权项 |
1. An image evaluation apparatus configured to find an exposure condition of a semiconductor pattern from an image shot with an electron beam, comprising:
a setting unit that sets a parameter to create three or more outlines from a SEM image; an outline creation unit that creates three or more outlines from a SEM image using the parameter set by the setting unit; and an estimation unit that uses a feature amount that is found based on a base pattern and the three or more outlines created by the outline creation unit to find an exposure condition. |
地址 |
Tokyo JP |