发明名称 IMAGE EVALUATION APPARATUS AND PATTERN SHAPE EVALUATION APPARATUS
摘要 Provided are an image evaluation method and an image evaluation apparatus to evaluate a two-dimensional shape and a change in shape of a pattern side wall of a semiconductor pattern based on a SEM image, thus estimating an exposure condition. To this end, a method and a device include a storage unit that stores a model indicating a relationship between a feature amount that is obtained by creating a plurality of outlines from a SEM image and an exposure condition, and outline creation parameter information corresponding to the model; an outline creation unit that creates a plurality of outlines from a SEM image using the outline creation parameter information; and an estimation unit that uses a feature amount that is found based on the plurality of outlines created by the outline creation unit and the model to find an exposure condition.
申请公布号 US2015287201(A1) 申请公布日期 2015.10.08
申请号 US201314377728 申请日期 2013.02.12
申请人 HITACHI HIGH-TECHNOLOGIES CORPORATION 发明人 Shinoda Shinichi;Toyoda Yasutaka;Minakawa Tsuyoshi;Matsuoka Ryoichi
分类号 G06T7/00;H01J37/22;H01J37/28 主分类号 G06T7/00
代理机构 代理人
主权项 1. An image evaluation apparatus configured to find an exposure condition of a semiconductor pattern from an image shot with an electron beam, comprising: a setting unit that sets a parameter to create three or more outlines from a SEM image; an outline creation unit that creates three or more outlines from a SEM image using the parameter set by the setting unit; and an estimation unit that uses a feature amount that is found based on a base pattern and the three or more outlines created by the outline creation unit to find an exposure condition.
地址 Tokyo JP