SUBLITHOGRAPHIC WIDTH FINFET EMPLOYING SOLID PHASE EPITAXY

摘要

A dielectric mandrel structure is formed on a single crystalline semiconductor layer. An amorphous semiconductor material layer is deposited on the physically exposed surfaces of the single crystalline semiconductor layer and surfaces of the mandrel structure. Optionally, the amorphous semiconductor material layer can be implanted with at least one different semiconductor material. Solid phase epitaxy is performed on the amorphous semiconductor material layer employing the single crystalline semiconductor layer as a seed layer, thereby forming an epitaxial semiconductor material layer with uniform thickness. Remaining portions of the epitaxial semiconductor material layer are single crystalline semiconductor fins and thickness of these fins are sublithographic. After removal of the dielectric mandrel structure, the single crystalline semiconductor fins can be employed to form a semiconductor device.

主权项

1. A semiconductor structure comprising:
a dielectric mandrel structure having vertical sidewalls and located on a single crystalline semiconductor material layer; and at least one vertical epitaxial semiconductor material portion in epitaxial alignment with a crystalline structure of said single crystalline semiconductor material layer, in contact with at least one of said vertical sidewalls, vertically extending from a top surface of said single crystalline semiconductor material layer to a top surface of said dielectric mandrel structure, and having a uniform lateral thickness throughout an entirety thereof.