发明名称 METHOD FOR PRODUCING AT LEAST ONE PAD ASSEMBLY ON A SUPPORT FOR THE SELF-ASSEMBLY OF AN INTEGRATED CIRCUIT CHIP ON THE SUPPORT BY THE FORMATION OF A FLUORINATED MATERIAL SURROUNDING THE PAD AND EXPOSURE OF THE PAD AND THE FLUORINATED MATERIAL TO AN ULTRAVIOLET TREATMENT IN THE PRESENCE OF OZONE
摘要 A method for producing at least one pad assembly (32, 50) on a support (19, 43) for use in a method for self-assembling at least one element (10) on the support (19, 43), comprises fanning, on the support (19, 43), a layer (28, 48) of at least one fluorinated material around the location (30, 44) of the pad assembly (32, 50), the layer (28, 48) having a thickness greater than 10 nm. The layer (28, 48) and the location (30, 44) are exposed to an ultraviolet treatment in the presence of ozone to form the pad assembly (32, 50) at said location (30, 44), wherein a drop of liquid (16) having a static contact angle on the pad assembly (32, 50) less than or equal to 15°, after the exposure to the ultraviolet treatment, has a static contact angle on the layer (28, 48) greater than or equal to 100°.
申请公布号 US2015287695(A1) 申请公布日期 2015.10.08
申请号 US201314438668 申请日期 2013.03.20
申请人 COMMISSARIAT A L' ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES ;STMICROELECTRONICS (CROLLES 2) SAS 发明人 Di Cioccio Léa;Mermoz Sébastien;Sanchez Loïc
分类号 H01L23/00;H01L23/14;H01L21/311 主分类号 H01L23/00
代理机构 代理人
主权项 1. A method for manufacturing at least one assembly pad on a support intended for the implementation of a method of self-assembly of at least one element (10) on the support, the manufacturing method comprising the successive steps of: (a) forming, on the support, a layer of at least one fluorinated material around the location of the assembly pad; the layer having a thickness higher than 10 nm; and (b) submitting the layer and the location to an ultraviolet processing in the presence of ozone to form the assembly pad at said location surrounded with said layer, a drop of demineralized water having a static contact angle on the assembly pad lower or equal to 15°, the demineralized water drop having, after step b), a static contact angle higher or equal to 100°.
地址 Paris FR
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