发明名称 SENSOR SUBSTRATE, METHOD OF MANUFACTURING THE SAME, AND DISPLAY APPARATUS HAVING THE SAME
摘要 A sensor substrate includes a base substrate, and a sensing transistor and a switching transistor, which are on the base substrate. The sensing transistor includes a first gate electrode, an optical response pattern on the first gate electrode, a first source electrode and a first drain electrode on the optical response pattern and spaced apart from each other, a first oxide semiconductor pattern between the first source electrode and the optical response pattern, and a second oxide semiconductor pattern between the first drain electrode and the optical response pattern. The switching transistor includes a second gate electrode, a third oxide semiconductor pattern on the second gate electrode, and a second source electrode and a second drain electrode on the third oxide semiconductor pattern to be spaced apart from each other.
申请公布号 US2015287752(A1) 申请公布日期 2015.10.08
申请号 US201514599695 申请日期 2015.01.19
申请人 Samsung Display Co., Ltd. 发明人 YEO YUNJONG;KIM JI HUN;CHO Hyunmin
分类号 H01L27/144;H01L31/032;H01L21/465;H01L29/786;H01L29/66;H01L31/0232;H01L31/113;H01L31/18 主分类号 H01L27/144
代理机构 代理人
主权项 1. A sensor substrate comprising: a base substrate; a sensing transistor on the base substrate, and comprising: a first gate electrode;an optical response pattern on the first gate electrode;a first source electrode and a first drain electrode, which are on the optical response pattern and spaced apart from each other;a first oxide semiconductor pattern between the first source electrode and the optical response pattern; anda second oxide semiconductor pattern between the first drain electrode and the optical response pattern, and a switching transistor on the base substrate, and comprising: a second gate electrode;a third oxide semiconductor pattern on the second gate electrode; anda second source electrode and a second drain electrode, which are on the third oxide semiconductor pattern and spaced apart from each other.
地址 Yongin-City KR