SILICON-ON-INSULATOR FINFET WITH BULK SOURCE AND DRAIN

摘要

Embodiments of the invention provide a semiconductor structure including a finFET having an epitaxial semiconductor region in direct physical contact with a plurality of fins, wherein the epitaxial semiconductor region traverses an insulator layer and is in direct physical contact with the semiconductor substrate. The gate of the finFET is disposed over an insulator layer, such as a buried oxide layer. Methods of forming the semiconductor structure are also included.

主权项

1. A semiconductor structure comprising:
a semiconductor substrate; an insulator layer disposed on the semiconductor substrate; a plurality of fins disposed on the semiconductor structure; an epitaxial semiconductor region in direct physical contact with the plurality of fins, wherein the epitaxial semiconductor region traverses the insulator layer and is in direct physical contact with the semiconductor substrate; and a gate region disposed on the insulator layer.