SEMICONDUCTOR DEVICE

摘要

A semiconductor device having a clamp diode has a breakdown voltage adjusting first conductivity type low concentration region provided on a semiconductor substrate. A second conductivity type high concentration region of circular shape is provided within the breakdown voltage adjusting first conductivity type low concentration region so as to be surrounded by the first conductivity type low concentration region but not surrounded by any other low concentration region. A first conductivity type high concentration region is provided within the first conductivity type low concentration region, without being held in contact with the second conductivity type high concentration region.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; a breakdown voltage adjusting first conductivity type low concentration region provided on the semiconductor substrate; a second conductivity type high concentration region provided near a surface within the breakdown voltage adjusting first conductivity type low concentration region so as to be surrounded by the first conductivity type low concentration region but not surrounded by any low concentration region other than the first conductivity type low concentration region, the second conductivity type high concentration region being circular; and a first conductivity type high concentration region provided on the surface within the breakdown voltage adjusting first conductivity type low concentration region without being held in contact with the second conductivity type high concentration region.