| 发明名称 |
SURGE PROTECTION ELEMENT AND SEMICONDUCTOR DEVICE |
| 摘要 |
A semiconductor element is provided which does not break down by avalanche current. A surge protection element includes: a semiconductor multi-layer comprising a nitride semiconductor; a first p-type semiconductor and a second p-type semiconductor which are disposed above the semiconductor multi-layer; a first electrode disposed above the first p-type semiconductor; and a second electrode disposed above the second p-type semiconductor. |
| 申请公布号 |
US2015287713(A1) |
申请公布日期 |
2015.10.08 |
| 申请号 |
US201514744083 |
申请日期 |
2015.06.19 |
| 申请人 |
Panasonic Intellectual Property Management Co., Ltd. |
发明人 |
MORITA TATSUO |
| 分类号 |
H01L27/02;H01L29/778;H01L29/20;H01L29/861;H01L29/872 |
主分类号 |
H01L27/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A surge protection element comprising:
a substrate; a semiconductor multi-layer disposed above the substrate, the semiconductor multi-layer including a channel and comprising a nitride semiconductor; a first p-type semiconductor layer and a second p-type semiconductor layer which are disposed above the semiconductor multi-layer; a first electrode disposed above the first p-type semiconductor layer; and a second electrode disposed above the second p-type semiconductor layer. |
| 地址 |
Osaka JP |
