Integrated Circuits Having a Plurality of High-K Metal Gate FETs with Various Combinations of Channel Foundation Structure and Gate Stack Structure and Methods of Making Same

摘要

Semiconductor manufacturing processes include forming conventional channel field effect transistors (FETs) and deeply depleted channel (DDC) FETs on the same substrate and selectively forming a plurality of gate stack types where those different gate stack types are assigned to and formed in connection with one or more of a conventional channel NFET, a conventional channel PFET, a DDC-NFET, and a DDC-PFET in accordance a with a predetermined pattern.