| 摘要 |
A method of manufacturing an SOI wafer, includes, before forming an oxide film, heat treating a prepared silicon wafer at a temperature ranging from 1100° C. to 1250° C. under an oxidizing atmosphere for 30 minutes to 120 minutes and polishing a surface of the silicon wafer subjected to the heat treatment, which will become a bonding interface. The method can sufficiently dissolve defects in a bond wafer in SOI-wafer manufacture and manufacture an SOI wafer with few faults such as defects. The method also can repeatedly reuse a separated wafer, which is produced as a by-product in the ion implantation separation method, as the bond wafer. |
