| 发明名称 |
METHOD FOR PROCESSING A CARRIER, A CARRIER, AN ELECTRONIC DEVICE AND A LITHOGRAPHIC MASK |
| 摘要 |
Various embodiments provide a method for processing a carrier, the method including changing the three-dimensional structure of a mask layer arranged over the carrier so that at least two mask layer regions are formed having different mask layer thicknesses; and applying an ion implantation process to the at least two mask layer regions to form at least two implanted regions in the carrier having different implantation depth profiles. |
| 申请公布号 |
US2015287599(A1) |
申请公布日期 |
2015.10.08 |
| 申请号 |
US201514693900 |
申请日期 |
2015.04.23 |
| 申请人 |
Infineon Technologies AG |
发明人 |
Schneider Jens;Feick Henning;Heller Marcel;Kaiser Dieter |
| 分类号 |
H01L21/266;C23C14/04;C23C14/48 |
主分类号 |
H01L21/266 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A carrier, the carrier comprising,
a doping profile comprising implanted ions, wherein the doping profile is generated by
changing the three-dimensional structure of a mask layer arranged over the carrier so that at least two mask layer regions are formed having different mask layer thicknesses; andapplying an ion implantation process to the at least two mask layer regions to form at least two implanted regions in the carrier having different implantation depth profiles. |
| 地址 |
Neubiberg DE |
