SEMICONDUCTOR DEVICE, LAYERED SEMICONDUCTOR DEVICE, SEALED-THEN-LAYERED SEMICONDUCTOR DEVICE, AND MANUFACTURING METHODS THEREFOR

摘要

This invention is a semiconductor device that contains a semiconductor element. Said semiconductor device also contains an above-semiconductor-element metal pad and metal wiring, both of which are electrically connected to the semiconductor element. The metal wiring is electrically connected to a through-electrode and a solder bump. The semiconductor device has a first insulating layer on which the semiconductor element is placed, a second insulating layer formed on top of the semiconductor element, and a third insulating layer formed on top of the second insulating layer. The metal wiring is electrically connected to the semiconductor element via the above-semiconductor-element metal pad on the top surface of the second insulating layer and passes through the second insulating layer from the top surface thereof to electrically connect to the abovementioned through-electrode on the bottom surface of the second insulating layer. This results in a semiconductor device that is easy to place on a circuit board, is easy to stack, and exhibits minimal warpage even if the density of the metal wiring is high.