发明名称 GAS DISTRIBUTING UNIT FOR APPARATUS TREATING SUBSTRATE
摘要 The present invention relates to a gas distribution unit for a substrate treatment apparatus, and relates to a gas diffusion part for improving thickness uniformity of a deposited thin film deposited on a substrate. Particularly, the present invention relates to the gas distribution unit for the substrate treatment apparatus including: the gas diffusion part comprising a process gas diffusion space in an inside thereof; a gas supply part which is connected to an upper part of the gas diffusion part through an interconnection method, and supplies a process gas into the process gas diffusion space; a first plate which is comprised on a bottom of the gas diffusion part, and comprises a plurality of injection holes formed as penetrating up and down; and a second plate which is comprised between the gas supply part and the first plate in order to divide the process gas diffusion space into an upper diffusion space and a lower diffusion space in the process gas diffusion space. The second plate includes: a plurality of through-holes penetrating laterally in order to link the upper diffusion space and the lower diffusion space; a partition wall part which divides the upper diffusion space into five upper diffusion zones; a center baffle which is partitioned by the partition wall part, and is arranged in a center of the second plate; and four edge baffles which are partitioned by the partition wall pat and are arrange radially to surround the center baffle. The gas supply part includes five gas supply pipes supplying the process gas to each upper diffusion zone.
申请公布号 KR20150113603(A) 申请公布日期 2015.10.08
申请号 KR20140037799 申请日期 2014.03.31
申请人 JUSUNG ENGINEERING CO., LTD. 发明人 KIM, KYEONG MIN;YOO, KWANG SU;LEE, MYUNG JIN;LEE, YONG HYUN;CHONG, CHEOL WOO
分类号 H01L21/02;H01L21/08 主分类号 H01L21/02
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