CAPACITATIVE ELEMENT AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor device having a transistor excellent in electric characteristics; or provide a semiconductor device which has a high opening ratio and which can increase charge capacity.SOLUTION: A semiconductor device has a transistor and a capacitative element on an insulating surface. The transistor has: a gate electrode; an oxide semiconductor film which overlaps the gate electrode; a gate insulation film between the gate electrode and the oxide semiconductor film; first conductive films which function as a pair of electrodes which contact the oxide semiconductor film; an oxide insulation film which contacts the oxide semiconductor film; a metal oxide film formed on the oxide insulation film; and a second conductive film which is formed at an opening of the metal oxide film and contacts the first conductive films and functions as a pixel electrode. The capacitative element has: a conductive film on the gate insulation film; a second conductive film; and a metal oxide film provided between the conductive film and the second conductive film.