发明名称 |
METHOD FOR PRODUCING DEPOSITION MASK |
摘要 |
The invention provides a method for producing a deposition mask that includes forming of an opening pattern 1 at a predetermined position in a resin film 2 by laser processing so as to penetrate therethrough. The method including the steps of: forming a meniscus of a liquid film 14 between the resin film 2 and a smooth surface 13b of a reference substrate 13 supporting the resin film 2; and after the resin film 2 and the reference substrate 13 are brought into close contact with an adsorption force generated by Laplace pressure, forming the opening pattern 1 by performing the laser processing. Accordingly, it is possible to increase the speed of the laser processing without generating a burr on an edge portion of the opening pattern. |
申请公布号 |
US2015283651(A1) |
申请公布日期 |
2015.10.08 |
申请号 |
US201514744748 |
申请日期 |
2015.06.19 |
申请人 |
V TECHNOLOGY CO., LTD |
发明人 |
Kudo Syuji;Yanagawa Yoshikatsu;Goto Takayuki |
分类号 |
B23K26/38;B05C21/00;B23K26/40 |
主分类号 |
B23K26/38 |
代理机构 |
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代理人 |
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主权项 |
1. A method for producing a deposition mask, the method comprising:
forming an opening pattern at a predetermined position in a resin film by laser processing so as to penetrate therethrough, the forming of the opening pattern comprising the steps of:
forming a meniscus of a liquid film between the resin film and a smooth surface of a support substrate supporting the resin film; andafter the resin film and the support substrate are brought into close contact with an adsorption force generated by Laplace pressure, forming the opening pattern by performing the laser processing. |
地址 |
Yokohama-shi JP |