发明名称 METHOD FOR PRODUCING DEPOSITION MASK
摘要 The invention provides a method for producing a deposition mask that includes forming of an opening pattern 1 at a predetermined position in a resin film 2 by laser processing so as to penetrate therethrough. The method including the steps of: forming a meniscus of a liquid film 14 between the resin film 2 and a smooth surface 13b of a reference substrate 13 supporting the resin film 2; and after the resin film 2 and the reference substrate 13 are brought into close contact with an adsorption force generated by Laplace pressure, forming the opening pattern 1 by performing the laser processing. Accordingly, it is possible to increase the speed of the laser processing without generating a burr on an edge portion of the opening pattern.
申请公布号 US2015283651(A1) 申请公布日期 2015.10.08
申请号 US201514744748 申请日期 2015.06.19
申请人 V TECHNOLOGY CO., LTD 发明人 Kudo Syuji;Yanagawa Yoshikatsu;Goto Takayuki
分类号 B23K26/38;B05C21/00;B23K26/40 主分类号 B23K26/38
代理机构 代理人
主权项 1. A method for producing a deposition mask, the method comprising: forming an opening pattern at a predetermined position in a resin film by laser processing so as to penetrate therethrough, the forming of the opening pattern comprising the steps of: forming a meniscus of a liquid film between the resin film and a smooth surface of a support substrate supporting the resin film; andafter the resin film and the support substrate are brought into close contact with an adsorption force generated by Laplace pressure, forming the opening pattern by performing the laser processing.
地址 Yokohama-shi JP
您可能感兴趣的专利