METHOD OF FABRICATING NITRIDE FILM

摘要

The present invention relates to a method for manufacturing a nitride film, capable of easily adjusting compression stress while the quality of a film is stably maintained by using an atomic layer deposition method. The method for manufacturing a nitride film by an atomic layer deposition method is to perform a unit cycle at least one time. The unit cycle includes a step of providing post-processing gas having nitrogen gas (N_2) onto a unit deposition film after the unit deposition film is formed in response to source gas adsorbed onto a substrate and response gas having a nitrogen component (N) and a hydrogen component (H).