MANUFACTURING METHOD FOR SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR SUBSTRATE, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method for semiconductor substrate, capable of improving life time of a minority carrier.SOLUTION: The manufacturing method for semiconductor substrate includes: forming a SiC substrate by a vapor growth method; introducing C (carbon) into the SiC substrate surface; and forming an n-type SiC layer on the SiC substrate by an epitaxial growth method.