METHODS OF MANUFACTURING A MAGNETORESISTIVE RANDOM ACCESS MEMORY DEVICE

摘要

In a method of manufacturing a MRAM device, a lower electrode is formed on a substrate. A first magnetic layer, a tunnel barrier layer, and a second magnetic layer are sequentially formed on the lower electrode layer. An etching mask is formed on the second magnetic layer. An ion beam etching process in which a first ion beam and a second ion beam are simultaneously emitted onto the substrate is performed to form a MTJ structure including a first magnetic layer pattern, a tunnel layer pattern, and a second magnetic layer pattern from the first magnetic layer, the tunnel barrier layer, and the second magnetic layer, respectively, the MTJ structure has no by-products remaining after the ion beam etching process is performed.

主权项

1. A method of manufacturing a magnetoresistive random access memory (MRAM) device, the method comprising:
forming a lower electrode on a substrate; forming a first magnetic layer, a tunnel barrier layer, and a second magnetic layer sequentially on the lower electrode layer; forming an etching mask on the second magnetic layer; and performing an ion beam etching process in which a first ion beam and a second ion beam are simultaneously emitted onto the substrate to form a magnetic tunnel junction (MTJ) structure including a first magnetic layer pattern, a tunnel layer pattern, and a second magnetic layer pattern from the first magnetic layer, the tunnel barrier layer, and the second magnetic layer, respectively, wherein the MTJ structure has no by-products remaining after the ion beam etching process is performed, wherein the first ion beam is emitted from a first ion beam source and has a first incident angle, and wherein the second ion beam is emitted from a second ion beam source and has a second incident angle.