| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device having a circuit with reduced area; or provide a semiconductor device having a circuit capable of reducing fluctuations in power source voltage.SOLUTION: A semiconductor device has a first transistor, a second transistor, first power source wiring and second power source wiring. The second transistor and the first transistor are laminated, and the second power source wiring and the first power source wiring are laminated. At least a part of the second power source wiring and a part of the first power source wiring overlap each other. The second power source wiring and the first power source wiring are almost parallel with each other. A source electrode of the first transistor is electrically connected with the first power source wiring. A source electrode of the second transistor is electrically connected with the second power source wiring. The second transistor is n-channel type and a channel formation region is formed by an oxide semiconductor. The first transistor is p-channel type and a channel formation region is formed by silicon. |
